Fig.1 (a) Cross-sectional transmission electron microscopy image of the newly developed multilayer electrode and (b) the magnetic field dependence of the electrical resistance of tunnel magnetoresistance (TMR) devices
A TMR device consists of a stacked structure comprising a magnetic electrode layer, tunnel barrier layer, and magnetic electrode layer. The newly developed MnGa/Mg/CoMn hybrid magnetic electrode layer controlled in the atomic layer scale (a) shows excellent magnetic properties and TMR properties of a tetragonal manganese alloy (b). The TMR ratio of the device built using this layer is significantly higher than that of a conventional device by a factor of more than 10 (b).
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